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Demonstrated is a nonvolatile memory device based on a SiO2/GaN/ AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was ~ 3 V between the program and erase modes and the retention...
It has been found that the field plate metal in direct contact with the mesa sidewall in a conventional prepassivation process is responsible for the early breakdown phenomenon in field plated AlGaN/GaNon- Si heterojunction field-effect transistors (HFETs). The breakdown voltage characteristics of the field plated AlGaN/GaN-on-Si HFETs fabricated using two different prepassivation processes were investigated...
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