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We report on study of the scattering mechanisms in the system of AlGaAs/GaAs two-dimensional electron gas (2DEG) with nearby embedded GaSb/GaAs type-II quantum dots (QDs), which directly affect its transport properties. Mobilities were measured as functions of electron density N2D in the QDs contained sample and reference sample at 4.2K, respectively. In the framework of Born approximation, a short-range...
Elongated GaSb/GaAs quantum dots (QDs) with a lateral aspect ratio of 2~3 is synthesized by the molecular beam epitaxy (MBE) with carefully controlling the Sb4 beam flux and As4 background pressure. These self-assembled quantum dots having geometrical anisotropy are embedded in the vicinity of the two-dimensional electron gas (2DEG). Anisotropic hall mobilities of the 2DEG under the helium temperature...
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