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We demonstrate the design, fabrication and characterization of plasmonic enhanced silicon photo-detector for infrared light. Theoretical model, experimental results and comparison between different geometric configurations will be presented and discussed.
We demonstrate the detection of subbandgap light in silicon nano pyramid using the process of internal photoemission in Schottky diode. The quantum efficiency is enhanced by using metal coated silicon nano pyramids.
Room temperature photoluminescence in Fe:ZnSe is observed under near-absorption-edge Quantum Cascade Laser (QCL) pumping. Both the spectral characteristics (λpeak ≈ 4.7 μm) and the luminescence lifetime (τ ≈ 0.38 us) are measured.
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