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Laser cooling of solids based on anti-Stokes photoluminescence was proposed in 1929 [1]. Indeed, through the light emission based on phonon-assisted anti-Stokes photoluminescence, the average photon energy emitted is larger than that for the absorbed pump photons. The difference between the emitted and absorbed photon energies is made up by the energy of each removed phonon. Since phonons represent...
Room temperature photoluminescence in Fe:ZnSe is observed under near-absorption-edge Quantum Cascade Laser (QCL) pumping. Both the spectral characteristics (λpeak ≈ 4.7 μm) and the luminescence lifetime (τ ≈ 0.38 us) are measured.
We have observed dramatic photoluminescence quenching caused by relocation of photogenerated electrons under large internal electric fields, inherent in GaN/AlN asymmetric-coupled quantum wells.
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
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