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In this paper, the skin effect of on-chip transmission lines and inductors at K-Band operating frequencies are investigated. Two microstrip lines with different lengths are simulated and compared with each other. A patterned ground shielded inductor is simulated using various meshing strategies and the results are compared. A 24 GHz common source CMOS low noise amplifier is designed, simulated and...
Through this work we highlighted and demonstrated the significance of an algorithmic way of design and development of CMOS LNAs at 5 GHz. The systematic design led to very good measured performances of 14 dB gain, 1.78 dB noise figure, 10 dB return loss both at the input and output and a high linearity of-3 dBm of IP3 under 5.4 mW power consumption. These results compare the best performances reported...
In this work we report on the importance of electromagnetic analysis for the layout design of monolithic 60 GHz power amplifiers (PA) in SiGe HBT technology. To facilitate this, two different layouts of the same circuit architecture were investigated. The circuits were originally designed using the circuit simulator of Agilentpsilas ADStrade and realized in a high performance 0.25 mum SiGe BiCMOS...
This work describes a lumped element based MIM capacitor model for the frequency range up to 110 GHz. Several MIM capacitors with different areas have been fabricated in a five metal layer 0.25 m SiGe HBT technology. All structures have been analyzed in a 2.5 D EM simulation environment and the simulated results are compared to measurements. A lumped element model valid up to 110 GHz has been developed...
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