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Motivated by the thermodynamic assessment of the Ga–N and In–N binaries, we study a number of Me–N systems (Me=Al, B, Ga, In, Si, Ti, V and Zr) in the present paper. The nitrogen fugacity as a function of temperature and pressure, f(T,P), is taken into account. The expression for the nitrogen fugacity reported in the literature reveals a high pressure limit that differs from system to system. An approach...
Motivated by the thermodynamic assessment of the Ga-N and In-N binaries, the thermodynamic parameters of the Si-N system are optimized in a similar way. The intermetallic compound Si 3 N 4 is treated as stoichiometric and the terminal solution phase diamond_Si as the pure diamond_Si. The liquid solution phase is assumed to be a substitutional solution with Redlich-Kister formula for...
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