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Hybrid pixel detectors are now widely used in particle physics experiments and at synchrotron light sources. They have also stimulated growing interest in other fields and, in particular, in medical imaging. Through the continuous pursuit of miniaturization in CMOS it has been possible to increase the functionality per pixel while maintaining or even shrinking pixel dimensions. The main constraint...
System integration, performance, cost and enhanced product functionality form the major driving forces behind contemporary innovations in packaging. The need for miniaturization has led to new architectures which combine a whole range of different technologies. The ultimate miniaturization goal is to incorporate all of the elements necessary to build the system in the same package. This approach of...
The challenges of 3-D integration are its sophisticated processes that require deposition, etching, bumping, plating, thinning, etc., which drive the need for wafer bonding materials that can sustain the high temperatures and chemically stringent environments found in these processes. This paper presents the development of a novel polymer material to be used as a wafer bonding material suitable for...
Three-dimensional (3-D) wafer stacking technologies offer new possibilities in terms of device architecture and miniaturization. To stack wafers, reliable through-silicon vias (TSVs) and interconnections must be processed into ultrathin wafers, and such processing is made possible by new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives...
This paper presents an overview of current 3D technologies development at CEA/LETI Minatec. Three different 3D approaches are described, and can be seen as 3 generations for that emerging field. An original through silicon via (TSV) process for CMOS image sensors (CIS) is presented, and electrical results showing very low resistances and high yields are described. A similar TSV process, combined with...
Making reliable through-die interconnects for three-dimensional (3-D) wafer stacking technologies requires a reduction in wafer thickness combined with a larger wafer diameter, which in turn requires new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives are becoming increasingly important in both integrated circuit and MEMS technologies...
In this paper a low temperature 'via-last' technology will be presented. This technology has been especially developed for CMOS image sensors wafer level packaging. In the first part of this paper, the design of the TSV will be presented and a first approach of a design rule definition for TSV will be introduced. The alignment strategy will be also presented, and specific patterns to succeed front...
Today 3D integration technology is investigated at every microelectronic device fabrication stage. Semiconductor layers, transistors, wafers and chips are stacked to create new functionalities, enhance device performance or develop innovative systems on a chip. 3D integration technology enables bringing them together on one chip. This can be done either as a sequence of bonding and processing stages...
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