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The finer pitch of 10 µm and below is currently explored by Microdisplays and Imaging industries. There are many contenders for achieving assembly at this pitch e.g. Cu-diffusion, Microtubes[1], and SnAg bumps. Among the contenders, SnAg bumps are tested for larger bumps but their capabilities for the finer pitch are yet to be explored. In this paper, behavior of SnAg for smaller bumps for the finer...
Hybrid pixel detectors are now widely used in particle physics experiments and at synchrotron light sources. They have also stimulated growing interest in other fields and, in particular, in medical imaging. Through the continuous pursuit of miniaturization in CMOS it has been possible to increase the functionality per pixel while maintaining or even shrinking pixel dimensions. The main constraint...
3D integration development has to be driven by industrial demand and applications. To get interested in those technological developments, industrials shall be convinced by benefits of Through Silicon Vias (TSV) integration versus traditional assembly approach. This will demonstrate that this approach is worth being more developed and implemented. In this study, we demonstrated that we are able to...
This paper deals with the development of a process for medium density through silicon via (TSV) polymer filling. This solution is driven by reliability considerations. Firstly, a set of specifications concerning the polymer selection is presented. Secondly, the process optimization with two kinds of polymers is presented: a liquid resin and a dry film resist. Issues with both of the solutions are...
As 3D packaging technologies are becoming more and more present in packaging roadmap, applications with higher requirement are rising continuously. Today, one of the main applications requiring 3D technologies is dedicated to nomadic components, including mobile phones, due to their very high compacity and integration capabilities. Those components need to work at high frequency, typically up to 1...
In this paper, we present some process developments and polymer material evaluations done to achieve the complete filling of 3D-WLP via. The test wafers used for these studies were either blankets with several via sizes specifically designed to determine via filling process window, or wafers with patterns and stacking which result from a real set-top box demonstrator. Initially, the 3D-WLP integration...
Today, a new trend in wafer level packaging is to add more than one die in the same package and, sometimes, to use the third dimension in order to: Decrease the form factor of the final system; Improve the thermal and electrical performances of the device; Decrease the cost of the final product. In order to stack the heterogeneous components in the third dimension, TSV (through silicon vias) is a...
In this paper, the technological bricks specifically developed for 3D integration of a set top box demonstrator will be presented. The integration flow was based on the 45 nm technology top chip stacked on a 130 nm technology active bottom wafer. This flow needed to develop specific wafer level packaging technologies such as: (1) Top chip & bottom chip interconnections (2) High aspect ratio TSV...
We present in this paper the two generic integration schemes developed at Leti, aiming to address two opposite industrial needs. The first scheme, based on TSV free via belt technology, allows wafer level integration of highly heterogeneous systems taking into account different technologies, wafer and die sizes and mainly targets end-user companies looking for generic technologies. The second one,...
Three-dimensional (3-D) wafer stacking technologies offer new possibilities in terms of device architecture and miniaturization. To stack wafers, reliable through-silicon vias (TSVs) and interconnections must be processed into ultrathin wafers, and such processing is made possible by new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives...
In this paper, the technological steps specifically developed for 3D integration of a set top box demonstrator will be presented (figure 1). The integration flow is based on a 45nm node technology top chip stacked on a 130nm node technology active bottom wafer. This flow needed to develop specific wafer level packaging technologies such as: Top & bottom chips interconnections; Temporary bonding...
This paper presents an overview of current 3D technologies development at CEA/LETI Minatec. Three different 3D approaches are described, and can be seen as 3 generations for that emerging field. An original through silicon via (TSV) process for CMOS image sensors (CIS) is presented, and electrical results showing very low resistances and high yields are described. A similar TSV process, combined with...
In this paper, the via-last TSV process using dry film lithography will be presented. Historically we used dry film resist (DFR) for the copper rerouting (via metallization) step only, but here we also tried implementing it for via etching. In the first part of the paper the via-last process flow will be briefly described. Then the copper rerouting lithography using dry film will be presented. This...
Today 3D integration technology is investigated at every microelectronic device fabrication stage. Semiconductor layers, transistors, wafers and chips are stacked to create new functionalities, enhance device performance or develop innovative systems on a chip. 3D integration technology enables bringing them together on one chip. This can be done either as a sequence of bonding and processing stages...
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