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Since few years, there has been an increasing interest and demand for foldable, stretchable and flexible electronics for different application areas, such as defense/military, astronomy, meteorology, medicine, biotechnologies and consumer applications. In this work, we propose a new packaging development on tunable curvature of CMOS image sensors. First, based on an existing fisheye design, the optical...
System integration, performance, cost and enhanced product functionality form the major driving forces behind contemporary innovations in packaging. The need for miniaturization has led to new architectures which combine a whole range of different technologies. The ultimate miniaturization goal is to incorporate all of the elements necessary to build the system in the same package. This approach of...
Today, a new trend in wafer level packaging is to add more than one die in the same package and, sometimes, to use the third dimension in order to: Decrease the form factor of the final system; Improve the thermal and electrical performances of the device; Decrease the cost of the final product. In order to stack the heterogeneous components in the third dimension, TSV (through silicon vias) is a...
In this paper, the technological bricks specifically developed for 3D integration of a set top box demonstrator will be presented. The integration flow was based on the 45 nm technology top chip stacked on a 130 nm technology active bottom wafer. This flow needed to develop specific wafer level packaging technologies such as: (1) Top chip & bottom chip interconnections (2) High aspect ratio TSV...
We present in this paper the two generic integration schemes developed at Leti, aiming to address two opposite industrial needs. The first scheme, based on TSV free via belt technology, allows wafer level integration of highly heterogeneous systems taking into account different technologies, wafer and die sizes and mainly targets end-user companies looking for generic technologies. The second one,...
In this paper, the technological steps specifically developed for 3D integration of a set top box demonstrator will be presented (figure 1). The integration flow is based on a 45nm node technology top chip stacked on a 130nm node technology active bottom wafer. This flow needed to develop specific wafer level packaging technologies such as: Top & bottom chips interconnections; Temporary bonding...
This paper presents an overview of current 3D technologies development at CEA/LETI Minatec. Three different 3D approaches are described, and can be seen as 3 generations for that emerging field. An original through silicon via (TSV) process for CMOS image sensors (CIS) is presented, and electrical results showing very low resistances and high yields are described. A similar TSV process, combined with...
Making reliable through-die interconnects for three-dimensional (3-D) wafer stacking technologies requires a reduction in wafer thickness combined with a larger wafer diameter, which in turn requires new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives are becoming increasingly important in both integrated circuit and MEMS technologies...
In this paper, the via-last TSV process using dry film lithography will be presented. Historically we used dry film resist (DFR) for the copper rerouting (via metallization) step only, but here we also tried implementing it for via etching. In the first part of the paper the via-last process flow will be briefly described. Then the copper rerouting lithography using dry film will be presented. This...
Today 3D integration technology is investigated at every microelectronic device fabrication stage. Semiconductor layers, transistors, wafers and chips are stacked to create new functionalities, enhance device performance or develop innovative systems on a chip. 3D integration technology enables bringing them together on one chip. This can be done either as a sequence of bonding and processing stages...
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