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In this paper, we present some process developments and polymer material evaluations done to achieve the complete filling of 3D-WLP via. The test wafers used for these studies were either blankets with several via sizes specifically designed to determine via filling process window, or wafers with patterns and stacking which result from a real set-top box demonstrator. Initially, the 3D-WLP integration...
Today, a new trend in wafer level packaging is to add more than one die in the same package and, sometimes, to use the third dimension in order to: Decrease the form factor of the final system; Improve the thermal and electrical performances of the device; Decrease the cost of the final product. In order to stack the heterogeneous components in the third dimension, TSV (through silicon vias) is a...
In this paper, the technological bricks specifically developed for 3D integration of a set top box demonstrator will be presented. The integration flow was based on the 45 nm technology top chip stacked on a 130 nm technology active bottom wafer. This flow needed to develop specific wafer level packaging technologies such as: (1) Top chip & bottom chip interconnections (2) High aspect ratio TSV...
In this paper, an original way to open buried contact in TSV via-last process using dry film lithography will be presented. This approach may solve at the same time issues on either non tapered vias and sloped vias technologies. In the first part of the paper the via-last process flow and the technological issues will be briefly described. Then the contact opening lithography using dry film will be...
In this paper, the via-last TSV process using dry film lithography will be presented. Historically we used dry film resist (DFR) for the copper rerouting (via metallization) step only, but here we also tried implementing it for via etching. In the first part of the paper the via-last process flow will be briefly described. Then the copper rerouting lithography using dry film will be presented. This...
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