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Through Silicon Via (TSV) is a very attractive solution for 3D stacking. One of the main concerns regarding the TSV technologies is the resulting stress build up inside the silicon substrate that induces warpage or expansion at the wafer level, crystalline defects in the neighboring silicon of the TSV and finally can impact performances and reliability of CMOS device as well. In this work, we show...
The challenges of 3-D integration are its sophisticated processes that require deposition, etching, bumping, plating, thinning, etc., which drive the need for wafer bonding materials that can sustain the high temperatures and chemically stringent environments found in these processes. This paper presents the development of a novel polymer material to be used as a wafer bonding material suitable for...
Three-dimensional (3-D) wafer stacking technologies offer new possibilities in terms of device architecture and miniaturization. To stack wafers, reliable through-silicon vias (TSVs) and interconnections must be processed into ultrathin wafers, and such processing is made possible by new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives...
Through silicon via (TSV) is a very attractive solution for 3D stacking. Currently the main technique in industrial TSV processes is the via-last approach. But the via-first approach has also many advantages and in particular allows the use of high thermal budget materials for high voltage applications. In this work, we will show results on process development and integration of 100 mum deep annular...
Making reliable through-die interconnects for three-dimensional (3-D) wafer stacking technologies requires a reduction in wafer thickness combined with a larger wafer diameter, which in turn requires new methods for wafer handling. Of the different wafer-level bonding techniques, temporary wafer bonding adhesives are becoming increasingly important in both integrated circuit and MEMS technologies...
In this paper, the via-last TSV process using dry film lithography will be presented. Historically we used dry film resist (DFR) for the copper rerouting (via metallization) step only, but here we also tried implementing it for via etching. In the first part of the paper the via-last process flow will be briefly described. Then the copper rerouting lithography using dry film will be presented. This...
In this paper a low temperature dasiavia-lastrdquo technology will be presented. This technology has been especially developed for CMOS image sensors wafer level packaging. In the first part of this paper, the steps of the through silicon vias (TSV) technology will be presented: glass wafer carrier bonding onto the silicon substrate, silicon thinning and backside technology including specific steps...
In this paper a new 'via-first' technology which is compatible with CMOS high temperature steps will be presented. This technology is based on filling high aspect ratio trenches with doped polysilicon and thinning the silicon after active device bonding onto a wafer carrier. The initial morphological requirements are described and different designs of TSV are presented. The complete technology for...
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