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Today, a new trend in wafer level packaging is to add more than one die in the same package and, sometimes, to use the third dimension in order to: Decrease the form factor of the final system; Improve the thermal and electrical performances of the device; Decrease the cost of the final product. In order to stack the heterogeneous components in the third dimension, TSV (through silicon vias) is a...
System integration is clearly a driving force for innovation in packaging. The need for miniaturization has led to new architectures that combine disparate technologies and materials. Today several different approaches have been developed. These include technologies like system in package. In this way, a new concept for heterogeneous integration is currently being developed at CEA-LETI and is called...
In this paper, the via-last TSV process using dry film lithography will be presented. Historically we used dry film resist (DFR) for the copper rerouting (via metallization) step only, but here we also tried implementing it for via etching. In the first part of the paper the via-last process flow will be briefly described. Then the copper rerouting lithography using dry film will be presented. This...
Today 3D integration technology is investigated at every microelectronic device fabrication stage. Semiconductor layers, transistors, wafers and chips are stacked to create new functionalities, enhance device performance or develop innovative systems on a chip. 3D integration technology enables bringing them together on one chip. This can be done either as a sequence of bonding and processing stages...
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