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We have developed an approach to perform “on the fly” electron spin resonance (OTF-ESR) measurements of negative bias temperature instability (NBTI) defect generation. This OTF-ESR approach allows for an atomic-scale identification of the defects involved in NBTI free of any recovery contamination. We demonstrate that, during NBTI stressing at elevated temperature and modest negative oxide bias, positively...
The effect of flatband-voltage reduction [roll-off (R-O)], which limits fabrication options for obtaining the needed band-edge threshold voltage values in transistors with highly scaled metal/high- k dielectric gate stacks, is discussed. The proposed mechanism causing this R-O phenomenon is suggested to be associated with the generation of positively charged oxygen vacancies in the interfacial SiO...
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