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A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material...
We have developed an approach to perform “on the fly” electron spin resonance (OTF-ESR) measurements of negative bias temperature instability (NBTI) defect generation. This OTF-ESR approach allows for an atomic-scale identification of the defects involved in NBTI free of any recovery contamination. We demonstrate that, during NBTI stressing at elevated temperature and modest negative oxide bias, positively...
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