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Si-based normal incident mid-infrared photodetectors using Ge dots were investigated. P–I–P structures of boron-doped Ge dots embedded in the intrinsic region were grown using solid source molecular beam epitaxy. The dark current was strongly dependent on the doping level in Ge dot. The structure grown at 700°C exhibited photoresponse peaking at 3.5μm. FTIR measurements on identical structure showed...
A SiGe/Si Multiple Quantum Wells (MQWs) structure is proposed for highly sensitive photodetection. A large photoconductive gain is obtained because of the unique SiGe/Si band structure, i.e., a large band offset in the valence band, but a small band offset in the conduction band. Such a structure allows the trapping of photogenerated holes inside the valance band quantum wells. Alternatively, photogenerated...
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