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This paper presents a fully integrated 60 GHz two stage power amplifier using cascode topology. The design procedure and measurement results are presented. The PA is implemented in a 0.25 μm SiGe:C BiCMOS technology featuring ft and fmax ~ 200 GHz. The saturated output power of the amplifier has been improved with the help of current combining and matching techniques. At 60 GHz the power amplifier...
A 60 GHz SiGe HBT chipset for high speed wireless communication systems has been developed. The functionalities of LNA, up-converter, down-converter and PA have been realized with good performance. Design strategy, achieved results and comparison with state-of-the-art work will be presented. The work proves that single chip integration of the whole 60 GHz RF-frond-end will be possible using silicon...
A monolithic power amplifier (PA) operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 SiGe-heterojunction bipolar transistor (HBT) technology, featuring npn transistors with and . A two-stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a small signal...
In this work we report on the importance of electromagnetic analysis for the layout design of monolithic 60 GHz power amplifiers (PA) in SiGe HBT technology. To facilitate this, two different layouts of the same circuit architecture were investigated. The circuits were originally designed using the circuit simulator of Agilentpsilas ADStrade and realized in a high performance 0.25 mum SiGe BiCMOS...
A 60 GHz monolithic upconversion mixer using a 0.25 mum SiGe-HBT technology with fT and fmaxap200 GHz is demonstrated in this work. The mixer is based on the Gilbert micromixer principle. It has broadband matched single-ended IF and LO inputs. An active LO balun is implemented on-chip to convert the single-ended LO signal into a differential one for driving the Gilbert cell. A shorted stub is inserted...
In this work electromagnetic analysis and experimental verification of integrated microstrip transmission lines on silicon substrates have been performed up to 90 GHz. Several microstrip lines of different width and length have been realized on a five metal layer silicon substrate together with a commercial SiGe HBT process. All structures have been analyzed using a 2.5D electromagnetic simulation...
This work presents an active downconverter targeted for integration in 60 GHz high speed data communication RF front-ends. The designed downconverter has been realized in 0.25 mum SiGe BiCMOS technology with ft around 200 GHz. The downconverter consists of a single balanced mixer with an on-chip balun for differential to single ended conversion. High linearity and bandwidth are the main design goals...
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