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This paper presents a fully integrated 60 GHz two stage power amplifier for wireless applications using common source topology and power combining. The PA is implemented in a 90 nm low power CMOS technology. The output power of the amplifier has been improved with the help of Wilkinson power combining technique. Also the Wilkinson power combiner has been utilized as a part of input and output matching...
This paper presents a fully integrated 60 GHz two stage power amplifier using cascode topology. The design procedure and measurement results are presented. The PA is implemented in a 0.25 μm SiGe:C BiCMOS technology featuring ft and fmax ~ 200 GHz. The saturated output power of the amplifier has been improved with the help of current combining and matching techniques. At 60 GHz the power amplifier...
A monolithic power amplifier (PA) operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 SiGe-heterojunction bipolar transistor (HBT) technology, featuring npn transistors with and . A two-stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a small signal...
This work presents the design and optimization strategies of a 60 GHz monolithic power amplifier. The circuit has been implemented utilizing an advanced 0.25 mum SiGe-HBT technology, featuring npn transistors with ftau and fmax = 200 GHz. The technique used to achieve a minimum difference between the output power under 1 dB compression and saturated output power is explained. Following this, the analysis...
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