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New process modules and device architectures for (sub-) 32 nm CMOS lead to both opportunities and challenges for analog/RF and mm-wave circuit design. A survey will be given describing the advanced process modules and competing architectures (planar bulk CMOS versus FinFETS), and their impact on analog/RF performance. FinFETs will be shown to be better suited for analog baseband design and to have...
FinFET technology presents a competitive alternative to planar CMOS as it features a better control of the short channel effects. This results in improved digital and analog performances. The radio-frequency (RF) behavior is however affected by a large level of parasitics. In this paper, we explain how technological options and device design affect the FinFET performance. In addition, the challenges...
Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or multiple-gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and Vt stability. Measured device performance is used to simulate...
Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and Vt stability. Measured device performance is used to simulate...
Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting trade-off in analog/RF design space. It is seen that FinFETs possess key advantages over bulk FETs for applications around 5 GHz where the performance-power trade-off is important. In case of higher frequency applications bulk MOSFETs are shown to hold the advantage on account of their higher...
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