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Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or multiple-gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and Vt stability. Measured device performance is used to simulate...
Printing is considered an attractive technology for realizing electronic functionality at low cost. Inkjet printing, in particular is very attractive for applications requiring low material consumption and spatially-specific material deposition. We report on inkjet-printed transistors offering performance approaching that of amorphous silicon, fabricated using nanoparticle-based metallization and...
We demonstrate a stacked antifuse-based field-programmable memory utilizing organic materials on plastic to enable applications such as the encoding of low-cost RFID tags. We demonstrate 2 stacked levels with 100 bits/level, delivering excellent read margins and disturb immunity. These devices show high-speed programming capability (25ns) and ultra-low programming energy requirements of <1nW/bit...
This paper shows a fully integrated, ESD protected, low-power, low-voltage amplifier designed with a low-cost 0.18 mum SiGe technology. The amplifier achieves 11 dB gain, 8 dB noise figure at 23 GHz and 1 dB compression point of -18 dBm consuming 2.8 mW from the 0.7 V supply voltage. At this frequency the amplifier shows also 9 and 13 dB input and output return losses, respectively. Gain and power...
Wireless applications require a low power technology that enables digital/analog/RF functions on the same chip. FinFET technology presents a competitive alternative to planar CMOS as it features good digital, analog and low-frequency noise performances. Also, very good matching performance is presented here for the first time. Moreover, FinFETs are shown to be attractive for low-power applications...
We demonstrate printed organic transistors with sub-10V VDD . Using inkjetted nanoparticle conductors, a polymer dielectric, and a pentacene precursor semiconductor, we demonstrate devices on plastic with mobilities >0.05cm2/V-s and on-off ratios >105. Thus, for the first time, we demonstrate devices with operating specifications approaching those required for low-cost electronic systems
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