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Since D flip-flop is one of the indispensable building blocks in integrated circuit (IC) design, providing a successful way to print D flip-flop on plastic foils will be the first step to reach fully printed flexible IC. Here, the network structure of single-walled carbon nanotubes (SWNTs) as an active layer has been employed to print the driver and load thin-film transistors (TFTs) of the D flip-flop...
A digitally controlled variable gain amplifier (VGA) for low power, low-IF receivers is presented. The amplifier was designed and fabricated in IBM 7WL BiCMOS 180 nm technology. It shows a dynamic range of 45 dB with a maximum gain of 52 dB and a minimum gain of 7 dB. The gain variation is achieved by means of switched feedback resistors. These are controlled by a demultiplexer and 4 control bits...
This work demonstrates an integrated low noise, high gain receiver targeted for wireless local positioning applications. The receiver is implemented in a 0.18 mum SiGe BiCMOS technology. With a single ended input and differential output the receiver comprises a two stage bipolar low noise amplifier with integrated on-chip transformer for single to differential conversion and a double balanced mixer...
New process modules and device architectures for (sub-) 32 nm CMOS lead to both opportunities and challenges for analog/RF and mm-wave circuit design. A survey will be given describing the advanced process modules and competing architectures (planar bulk CMOS versus FinFETS), and their impact on analog/RF performance. FinFETs will be shown to be better suited for analog baseband design and to have...
In recent years, printing has received substantial interest as a technique for realizing low cost, large area electronic systems. Printing allows the use of purely additive processing, thus lowering process complexity and material usage. Coupled with the use of low-cost substrates such as plastic, metal foils, etc., it is expected that printed electronics will enable the realization of a wide range...
FinFET technology presents a competitive alternative to planar CMOS as it features a better control of the short channel effects. This results in improved digital and analog performances. The radio-frequency (RF) behavior is however affected by a large level of parasitics. In this paper, we explain how technological options and device design affect the FinFET performance. In addition, the challenges...
In this work electromagnetic analysis and experimental verification of integrated microstrip transmission lines on silicon substrates have been performed up to 90 GHz. Several microstrip lines of different width and length have been realized on a five metal layer silicon substrate together with a commercial SiGe HBT process. All structures have been analyzed using a 2.5D electromagnetic simulation...
Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or multiple-gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and Vt stability. Measured device performance is used to simulate...
Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and Vt stability. Measured device performance is used to simulate...
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