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The high frequency thermal noise sets the lower limit of the detectable signals in the receiver RF front-end systems.Hence it is very important that the models for thermal noise should be more accurate and physical. In this paper, we model thermal noise with BSIMSOI and PSPSOI models and compare it with the hardware data. The comparison is done for two types of FET:thick gate-oxide NFET (5.2 nm) and...
A fully integrated CMOS receiver consisting of an LNA and a mixer has been designed and fabricated in IBM BiCMOS 7WL 180 nm technology. An on-chip balun loading the second stage of the LNA was implemented as well for single-to-differential conversion. The receiver was developed for high performance wireless local positioning systems and excellent experimental results were demonstrated: a conversion...
In this work we present a fully integrated BiCMOS RF-receiver. The receiver comprises an LNA and a mixer. The most challenging aspects of the design were the high gain and an extremely low noise figure specified by RESOLUTION. The target was to achieve an integrated LNA and mixer showing at least 25 dB voltage conversion gain and overall noise figure less than 4 dB under minimum power consumption...
Through this work we highlighted and demonstrated the significance of an algorithmic way of design and development of CMOS LNAs at 5 GHz. The systematic design led to very good measured performances of 14 dB gain, 1.78 dB noise figure, 10 dB return loss both at the input and output and a high linearity of-3 dBm of IP3 under 5.4 mW power consumption. These results compare the best performances reported...
A two stage bipolar low noise amplifier based on common-emitter configuration is presented in this work. From transistor size scaling to complete two stage integration, various design aspects and issues will be investigated. It will be shown that by following the proposed design methodology, the input as well as the interstage matching of the low noise amplifier (LNA) can be highly simplified without...
A monolithic low-noise-amplifier operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 mum SiGe BiCMOS technology, featuring npn transistors with fT and fmax ap 200 GHz. A two stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a gain of 18 dB at 61 GHz,...
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