The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Localizing tumors and securing resection margins are sometimes difficult especially during laparoscopic surgery for malignant diseases. Therefore, we have developed a tissue marker, which is composed of giant cluster-like vesicles (GCVs) encapsulating near-infrared (NIR) fluorescent liposomes and X-ray contrast agents coated with lipids. The GCVs facilitate localizing tumors preoperatively and intraoperatively...
Recognizing objects in images is a very important research task in the field of computer vision and pattern recognition. We introduce an effective method for object recognition. In order to characterize the appearance of the objects, the SFIT features are extracted from the images. Then, these features are sent to train four classifiers i.e. KNN classifier, Naive Bayes classifier, Decision tree classifier...
During reactive ion plasma etching (RIE) of semiconductor materials, a strong correlation between etch rate and feature size, or more specifically feature aspect ratio (AR), is often observed. There have been several analytical models proposed to explain this aspect ratio dependent etch-rate (ARDE), also known as “RIE lag.”[1,2] While most analytical models only address individual causes of ARDE,...
Anisotropic etching for microelectronics fabrication is accomplished by energetic ion bombardment in chemically enhanced sputtering. One challenge is being able to control the ion energy-angular distributions (IEADs) onto the surface of the wafer to selectively activate desired processes, which is advantageous for maintaining the critical dimension (CD) of features. Capacitive coupled plasmas (CCPs)...
Dual frequency capacitively coupled plasmas provide the microelectronics fabrication industry flexible control, high selectivity and uniformity. The spatial variation of the phases, magnitude and wavelength of the high frequency (HF) rf bias will affect electron density, electron temperature, sheath thickness and ion transit time through the sheath. These variations ultimately affect the ion energy...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.