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High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, sandwich structure with embedded...
High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic,...
This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance...
This paper presents an investigation into the integration of high current density inductors into a double side cooled sandwich power module package from the perspective of thermal management of the integrated inductors. The advantage of using this integration method with regards to using the converter thermal management system will be discussed in order to create a high speed optimised commutation...
A novel double-side cooled power module is presented which delivers superior cooling performance with the potential for improved robustness to thermal cycling. The semiconductor dies are sandwiched between conventional DBC substrates, the substrates being directly cooled rather than through a conventional heat spreader heat sink assembly. A theoretical analysis is presented illustrating that direct...
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