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High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, sandwich structure with embedded...
Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, Al, and Ag foils for the top side insert (TSI) material in press pack like single IGBT samples have been investigated using overcurrent and current passage...
The development of a framework for the analysis and design optimization of power electronics module is described in this paper. This framework consists of analysis software that is capable of carrying out detailed dynamic as well as steady state electric and thermal analysis on power modules using finite difference numerical method and a black-box optimization solver that is based on the Mesh Adaptive...
The development of a framework for the analysis and design optimization of power electronics module is described in this paper. This framework consists of analysis software that is capable of carrying out detailed dynamic as well as steady state electric and thermal analysis on power modules using finite difference numerical method and a black-box optimization solver that is based on the Mesh Adaptive...
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