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Low-k dielectrics prepared by CVD in the form of 200nm thick layers on Si wafers were thermally treated at 410°C and irradiated using UV lamps emitting photons of different wavelengths around 172nm, 185nm, and 222nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1mbar up to 700mbar. Subsequently, the samples were investigated using FTIR...
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