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We fabricate electrically driven wavelength-scale embedded active-region photonic-crystal lasers using ion implantation and diffusion methods. The device begins continuous wave lasing at room temperature, and has a threshold current of 0.48 mA.
We demonstrate direct modulation of an electrically driven photonic crystal nanocavity laser for the first time. Employing ultracompact embedded active-region and lateral current injection structure, the device operates at 10 Gbit/s with ultra-low operating energy.
We propose a three-terminal device based on an optical injection-locked photonic crystal laser to achieve high-speed off-chip interconnection to meet future network-on-chip needs. 40 Gb/s large-signal direct modulation and more than three times bandwidth enhancement are demonstrated.
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