The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate the first continuous wave operation of electrically driven photonic-crystal lasers on Si at room temperature. Plasma assisted bonding integrated III–V semiconductor devices on Si. The device exhibited a 33 µA threshold current.
We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 µW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs...
We fabricate electrically driven wavelength-scale embedded active-region photonic-crystal lasers using ion implantation and diffusion methods. The device begins continuous wave lasing at room temperature, and has a threshold current of 0.48 mA.
We propose a three-terminal device based on an optical injection-locked photonic crystal laser to achieve high-speed off-chip interconnection to meet future network-on-chip needs. 40 Gb/s large-signal direct modulation and more than three times bandwidth enhancement are demonstrated.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.