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Short distance optical communication is required to reduce power consumption of ICT systems and continuously improve performance of datacentres and HPCs [1]. Reduced energy consumption and increased bandwidth density [2-3] are required to develop optical interconnects between chips and on chips. Therefore, lasers and detectors with ultra-low operating energy have to be connected by Si nanowire waveguides...
Enhanced coupling in slanted L3 nanocavity array expanded bandwidth to 4 THz at telecom wavelength. High-Q tuned L3 nanocavity realized 1,000 coupled cavities with acceptable propagation loss and delay-bandwidth product over 100.
We achieved three-dimensional mode conversion between a Si-wire waveguide and a deep sub-λ plasmonic slot waveguide (60 χ 50 nm2) for the first time. The coupling loss was only about 2 dB.
We demonstrate the first continuous wave operation of electrically driven photonic-crystal lasers on Si at room temperature. Plasma assisted bonding integrated III–V semiconductor devices on Si. The device exhibited a 33 µA threshold current.
For large-scale, multi-partite photonic quantum information system, stable on-demand single photon sources are particularly important building blocks. A scheme to implement the source is to multiplex many heralded single photon sources of identical photon pair generators [1]. To achieve this, we must increase the integration density of the photon pair generators. Slow light enhanced nonlinearity in...
We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
A 5 GHz RZ clock optical pulse is modulated by a random control optical pulse train using photonic crystal nanocavity switches. In addition, we significantly improve the switching speed by introducing argon ions
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