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Amorphous hydrogenated carbon (a-C:H) films were deposited (at room temperature) by plasma CVD of acetylene onto glass substrates with substrate bias (V B ) varying within 0 to -400 V. Films deposited at V B ≥ 200 V showed significant photoconductivity. The photoconductivity of the films was measured under different illumination level (0-100 mW/cm 2 ). Hopping at the shallow localized states was the predominant mode of electron transport process in these films. Photo-induced conduction process in the amorphous material in the temperature region 80 < T < 300 K could be explained by the multi-trapping model of photo excited carriers.