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Thin film copper membranes on silicon substrates were constructed using micromachining techniques. Membranes were used as flexible ground planes beneath a microstrip transmission line. Actuation of membranes induced phase shift in the transmitted signal. Membranes possessed radial surface corrugations 10 μm deep to increase their flexibility. Membranes were released using a combination of KOH and XeF2 backside etching. Surface corrugations were made using KOH etching on the frontside of the wafer. Membrane flexibility was studied as a function of diameter and corrugation pitch. A phase shift of 30.03° at 12.08 GHz was achieved by actuating an array of five 4 mm diameter membranes beneath a microstrip line.