We suggest instant glue for passivation layer of indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). The instant glue is liquid in room temperature, thus we could easily drop the glue on the IGZO channel layer. As a result, the IGZO TFTs with glue passivation layer (GPL) showed improved electrical characteristics such as field effect mobility of 12.11 cm2/Vs, on/off ratio of 8.72×107, and subthreshold swing of 0.39 V/dec. Furthermore, stability test under positive bias temperature stress of IGZO TFTs with GPL showed low threshold voltage shift at 1.0 V. These results indicate that GPL can play significant role for both improving electrical characteristics and enhancing stability by blocking the oxygen and moisture in atmosphere efficiently.