The process to form Ti germanide on P-implanted Ge ( $ {2} \times {10}^{ {19}}$ cm−3) with low contact resistivity ( $\rho _{c}$ ) was developed. Sequential deposition of Ti and TiN on n-Ge without annealing leads to rectifying ${I}$ – ${V}$ characteristic due to Fermi level pinning. With 600 °C annealing, Ohmic-like ${I}$ – ${V}$ behavior was achieved due to Ti germanide (C54 phase included) formation that depins Fermi level and makes $\rho _{c}$ of ${1.5}\times {10}^{{{-{5}}}} ~\Omega -\text {cm}^{{{2}}}$ and Schottky barrier height for electron ( $\Phi _{\text {BN}}$ ) of 0.22 eV. Even for 700 °C annealing, the Ti germanide exhibits comparable $\rho _{c}$ and good thermal stability without agglomeration, which is a concern of NiGe. By adopting additional P implantation after germanide, $\rho _{c}$ and $\Phi _{\text {BN}}$ can be further improved to ${3.6}\times {10}^{{{- {6}}}}~\Omega $ -cm2 and 0.17 eV, respectively. The improvement is ascribed to the enhanced dopant segregation at the germanide/Ge interface that results in stronger dipoles and more significantly reduced $\Phi _{\text {BN}}$ and $\rho _{c}$ . The Ti germanide process paves a promising path to enable a next-generation Ge technology.