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10th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2010). 2nd IEEE International Workshop on THz Radiation: Basic Research and Applications (TERA 2010)
Electrical dc conductivity and laser damage threshold of pure and urea doped KH2PO4 crystals are investigated. It is found that the crystals with a low electrical conductivity have a high laser damage threshold. It is shown that increase of the resistivity and the laser damage threshold of the crystals realizes by the crystal growth from urea-containing aqueous solutions. The optimum molar value of...
Polariton modes in quantum-well traps for Bose-condensation of excitons are studied. It is found that some modes can become unstable and start lasing due to exciton spectrum narrowing during condensation. A model of such lasing is developed, showing different lasing regimes and possible coherent features of recombination emission of excitons.
Using numerical modeling, influence of tuning the lasing frequency within the gain band on the modulation response of quantum-well heterolasers in the GaInAs-GaInAsP system versus the modulation frequency of pump current is investigated. It is established that maximum values of the frequency width of the response band and possibilities of realization of high-speed regimes at signal transmission in...
Modeling of the random lasing in diffusive regime by Monte-Carlo method and Kubelka-Munk theory has been carried out. It has been obtained the experiment-corresponded dependencies of radiation parameters on media characteristics. The optimal samples parameters for effective lasing have been found.
Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPS-DLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, large gain and effective carrier transport. Experimental investigation has shown that such an approach gives record values of the conversion efficiency...
The experimental results causing the trench of subwavelength nanostructures formation in semiconductor's 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their...
Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12-300 K and electron energies of 3.5-8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm2 has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on...
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