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Irradiation of silicon power devices is discussed for electrons of 0.8 to 12 MeV energy and gammas from Co60 in terms of their effectiveness in altering device switching properties. Comparison is made with gold or platinum diffused devices. Gold diffusion provides the best tradeoff of forward voltage drop and reverse recovery time in diodes or turnoff time in thyristors. This advantage is somewhat...
It is shown that the ratings of rectifiers can be optimized by maximizing the ratio of the high level to the low level lifetime. An optimization criterion relating the recombination center location to its capture cross-section ratio for holes and electrons is derived. In the case of thyristors, the leakage current must also be considered in the optimization. This results in a criterion which relates...
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