Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. Operating the dots, e.g., as qubits, requires a precise understanding and control of the confined states and their properties. In article number 2300395, Dennis Mayer and Angelika Knothe perform large‐scale numerical characterization of confined quantum states in bilayer graphene dots over an extensive range of gate‐tunable parameters such as the dot size, depth, shape, and the bilayer graphene gap. The authors demonstrate the dot states' high susceptibility to gate‐dependent confinement and material parameters, enabling efficient tuning of confined states and valley g‐factor modulation by quantum dot design.