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Epitaxy growth and mechanical transfer of high‐quality III‐nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer‐scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h‐BN composite buffer layer and its application in flexible InGaN‐based light‐emitting diodes (LEDs)...
Light‐Emitting Diodes
In article number 2306132, Tongbo Wei and co‐workers demonstrate a pioneering technology for growing 3D semiconductor films on 2D materials, namely van der Waals epitaxy, which both relaxes the lattice and thermal matching requirements between the epilayer and substrate, and enables the exfoliation of epilayers for flexible optoelectronic devices, such as flexible displays.
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