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We have studied the temperature dependence of the forward dark current in a Si PIN photodiode. The temperature variations of the ideality factor and saturation current suggest that, depending on temperature and bias, both tunneling enhanced interface recombination and bulk recombination contribute to the conduction process. Furthermore, the capacitance measurements reveal that the doping density distribution...
The temperature dependence of outer hair cell motility-related gating current and capacitance was evaluated under whole-cell voltage clamp. Temperature change caused a shift of these voltage-dependent functions along the voltage axis, with a decrease in temperature causing a negative shift in the voltage at peak capacitance (V pkcm ) of 19.2 mV per 10°C. Gating current kinetics...
Summary form only given. A spark gap (2-8-kV applied voltage, 4-μF capacitance, 1-in tube diameter, 0.3-0.5-in electrode distance) was made to generate a small-size dynamic plasma. Four detection systems were used to measure the plasma density and temperature as a function of time and position: a Mach-Zehnder-type interferometer for the plasma refractivity, an expansion speed detector using...
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