The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The resistivity of a quasi-one-dimensional structure fabricated without masks by 20-keV Ga+ focused ion beam (FIB) on crystalline Si substrates was investigated for the first time, along with an analysis of properties of implanted p+ layers. The junction depth of the 7?? off-axis implanted layer after annealing, which was measured by stain method, is 410 nm. The distribution profile was investigated...
This paper presents the design and optimisation of a very high quality (Q) factor inductor using MEMS technology for 10 GHz to 20 GHz frequency band. The effects of various parameters of a symmetric inductor structure on the Q-factor and inductance are thoroughly analysed. The inductor has been designed on silicon-on-sapphire (SOS) substrate because it offers superior characteristics of low substrate...
A Pt/C heterojunction has been fabricated and tested as a conductometric hydrogen gas sensor. The carbon layer, deposited between planar Au substrate contacts using a filtered cathodic vacuum arc (with an applied substrate bias of -500 V), consisted largely of vertically oriented graphitic sheets. These sheets have good through-film electrical conductivity and contributed to a low device resistance...
In this paper we report an approach to fully integrate micro fabricated sensors into textiles. We first developed platinum resistance temperature sensors (RTDs) on 500 ??m-wide, 67.5 mm-long plastic stripes. After completing the sensor fabrication, we used a dicing saw to separate individual sensors by cutting the plastic foil into stripes, each containing an individual sensor and connecting lines...
Palladium nanowire sensors have been limited to detecting small concentrations of molecular hydrogen (H2). Upon excessive hydrogen uptake, tunneling currents fuse the nanowires creating a short circuit causing permanent failure. Here we demonstrate that electrodeposited palladium nanowires enclosed within single-step anodized aluminum oxide nanopores reliably detect hydrogen concentrations greater...
We use infrared microscopy to image the temperature profile of graphene field-effect transistors operating at constant source to drain current bias. We find a peak in the temperature profile, i.e. a ??hot spot?? appears near the drain (anode) electrode of the graphene sheet at high current while operating in the hole-doped regime. We shift the hot spot position on the graphene sheet by tuning the...
Undoped Nanostructured Titanium Dioxide thin film (UN) and Cobalt doped nanostructured (CoDN) TiO2 thin film has successfully prepared using sol-gel method and deposited onto silicon and glass substrate by spin coating technique. Nanostructured TiO2 thin film were prepared at 0.1 M, 0.2 M, 0.3 M and 0.4 M, Co doped TiO2 thin film was prepared with additional of ion Co at 1 at%. The electrical and...
As operating frequencies increase in state-of-the-art wireless designs, highly accurate modelling of critical interconnect paths routed over silicon is crucial for first-pass design success [1]. With this in mind, the interconnect stack of an IBM silicon germanium (SiGe) process incorporating a TSV ground supply network was modelled with model accuracy and efficiency as the goals. A unique modelling...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.