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This paper presents a frequency-mode capacitive sensor readout front-end operating in a wide temperature range. First, a biased varactor temperature compensation (BVTC) is proposed to compensate the aggregate temperature gradients from the sensor and the oscillator circuit, achieving a nullified temperature coefficient for the oscillation frequency. Second, a temperature coherent quantization (TCQ)...
Insulated-Gate Bipolar Transistors (IGBTs) exhibit a gate-voltage oscillation phenomenon during short-circuit, which can result in a gate-oxide breakdown. The oscillations have been investigated through device simulations and experimental investigations of a 3.3-kV IGBT. It has been found that the oscillations are more likely to occur at low DC-link voltages, high gate voltages and low temperatures...
This paper proposes a novel analytical model for semiconductor single-electron transistor (SET) with concrete size coulomb island at room temperature. The number of electrons in island of SET is analyzed when it is odd number or even number, respectively, then a uniform calculation model is gained for the first time. Based on the model, the I-V characteristics such as coulomb oscillation and coulomb...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
A new phase-modulation device with simple structure and high reliability was constructed using a short amorphous wire. A high-frequency ac current (carrier) and a signal current are simultaneously passed through the wire, which undergoes the large Barkhausen effect when the circumferential flux changes. Highly linear modulation characteristics were obtained up to 0.67?? using a triangular-wave ac...
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