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Influence of operating temperature on short channel characteristics, analog and RF performance of Double gate MOS transistor is systematically investigated with the help of a 2-Dimensional commercial device simulator. Temperature compensation point is observed in the transfer characteristics of device. Overall improvement in Analog/RF Figure of Merit is observed at low temperature operation.
This paper presents and evaluates the effect of charge/discharge rate on the supercapacitorpsilas temperature. Experiments show that during charging the temperature rises more than during discharging. The paper also investigates the supercapacitorpsilas energy efficiency as a function of the discharge time and the level of the voltage discharge ratio. Where the voltage discharge ratio is defined as...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
Capacitors, with a capacitance density of up to 100 nF/mm2 and a dielectric constant of 950??1600 were produced by optimizing the ferroelectric material combined with stacking. Accelerated lifetime (ALT) tests under elevated temperatures of 210??290??C and dc fields of 25??250 kV/cm were performed and the lifetime criterion, common for ceramic multilayer capacitors, was employed: The increase of the...
A bulk Fe84Nb7B9 alloy was produced by extruding amorphous powder at temperatures (Te) between 653 and 723K, at pressures (Pe) between 824 and 1208 MPa, and at a speed (Ve) of 5 mm/s. The subsequent annealing of the extruded bulk alloy for 3.6 ks at temperatures between 873 and 973K resulted in the formation of a (for the most part) single bec phase, with grain sizes near 10 nm. The bulk alloy, extruded...
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