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Not only the active devices are affected by the generated power in electronics but capacitors also suffer from the elevated temperature levels. This paper attempts transferring the concepts of the thermal transient measurement method used in the semiconductor characterization to capacitor components. We show how temperature dependent electrical parameters could be used to measure the temperature of...
The capacitance plays a key role in determining the timing performances of a detector. To date, this parameter has never been fully investigated in the study of SiC photodiodes electro-optical characteristics. In this paper, we report on the capacitance dependence of interdigitated 4H-SiC Schottky photodiodes on different operating parameters like reverse bias, temperature, light irradiance and illumination...
The present work reports some experimental results on the electrical properties of commercial Gallium Nitride blue light emitting diode (GaN blue LED). Many instruments have been used in this study to make different kinds of measurements. For example, Keithley 238 high current measure unit, Boonton 7200 capacitance meter, and Wayne Kerr 6440 precision component analyzer (within frequency range from...
The present paper reports some computational measurements for the electrical properties of commercial Gallium Nitride blue light emitting diode (GaN blue LED). Many instruments have been used in this study to make different kinds of measurements. For example, Keithley 238 high current measure unit, Boonton 7200 capacitance meter, and wayne Kerr 6440 precision component analyzer ( within frequency...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
A new self calibrating and adjustable CMOS pad driver for improved electromagnetic compatibility is presented. A variable, user defined output slew rate is achieved, independent of process, supply voltage, temperature and load variations. Measurements on a test chip proved the functionality and the improvements of the driver. For example, the deviation of a slope time from the nominal value by varying...
Capacitance-voltage characteristics of the Ti/W-SiO2-Si(p) structures with different oxide thicknesses have been measured at temperatures in the range from 20?? C to 550??C. Analysis of the results shows that the SiO2 relative dielectric permittivity increases with the temperature while the oxide effective charge density Qeff decreases and becomes negative at temperatures greater than 300??C.
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