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In recent years, Ag alloy wire has attracted great interest as a novel bonding material to replace the conventional Au wire bonding. Ag wire has the advantages of great workability, high electrical conductivity and low growth rate of intermetallic compound at bonding interface. However, in literatures, studies on mechanisms of the growth of Ag-Al intermetallic compounds and their impact on bonding...
Gold wire bonding has been widely used as the first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for an alternative to the gold wire used in wire bonding and the transition to a copper wire bonding technology. Potential advantages of transition to a Cu–Al wire bond system include low cost of copper wire, lower thermal resistivity,...
Copper wire bond has been applied in industry for years and its package reliability is certainly an important subject for researchers and manufacturers. The mechanism of wire bond formation is complicated and a consensus hasn't been reached. Combination of a few theories to hypothesize the whole process of copper wire stitch bond formation on silver plating surface is elaborated in this paper. The...
In this study, palladium coated copper core wire is evaluated and a series of bond quality test is carried out on Aluminum (1.5μm Al) bond pad and Nickel Palladium (2.5μm Ni/0.3μmPd) bond pad with Ø0.6mil palladium-coated copper core wire. From the optimization with mechanical chips, it is found that NiPd has larger bond parameters windows than Al bond pad. Ball shear strength of NiPd samples becomes...
The hermetic sealing of a Micro Electronic Mechanical (MEMS) system is a critical requirement to the functional operation of MEMS devices. Cu-Sn SolidLiquid Inter-diffusion (SLID) bonding is one such encapsulation method of achieving hermetic sealing of MEMS devices. Recently, studies have identified a cause for concern relating to the reliability of SLID bonding. These studies have shown that electroplated...
Gold wire bonding has been widely used as first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for alternative to the gold wire used in wire bonding and the transition to copper wire bonding technology. Potential advantages of transition to Cu-Al wire bond system includes low cost of copper wire, lower thermal resistivity, lower electrical...
Gold wire bonding has been widely used as first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for alternative to the gold wire used in wire bonding and the transition to copper wire bonding technology. Potential advantages of transition to Cu-Al wire bond system includes low cost of copper wire, lower thermal resistivity, lower electrical...
With the rapid development of the electronic industry, electronic products tend to be small, lightweight and high density, the demand of flexible copper clad laminate (FCCL) is increasing every year. Peel strength is a key property for FCCL. This paper studies the effect of heat/humidity treatment on the adhesion strength of FCCL. The results show that the original peel strength of FCCL was high in...
In this paper, the effect of Ni-W alloy barrier layer on copper pillar/Sn IMCs evolution has been investigated. Additive W weight content of Ni-W alloy ranged from 16 to 18 at. %. Controlled thickness of barrier layer was prepared on Cu substrate. Then, excessive matte Sn electroplated on as-deposited Ni-W layer. Ni-W had compact microstructure in state of FCC solid solution, which means it had good...
Wire bonding using bare Cu wire and Pd coated Cu (PdCu) wire has been adopted rapidly as a mainstream packaging technology as an alternative to Au wire bonding. The interfacial characteristics of both Au and Cu wire bonds are well understood as a result of extensive research. However, the interfacial feature and its evaluation in connection with Pd coated Cu wire bonds have not been investigated in...
3-D integration provides a pathway to achieve high performance microsystems through bonding and interconnection of best-of-breed materials and devices. Bonding of device layers can be accomplished by dielectric bonding and/or metal–metal interconnect bonding with a number of metal–metal systems currently under development. RTI has been investigating Cu–Cu and Cu/Sn–Cu interconnect processes for high...
Joint properties of Au stud bumps joined with Sn-3.5Ag solder by flip chip bonding were investigated. Au stud bumps were bonded on SOP (solder on pad) at bonding temperature of 260°C and 300°C for 10sec, respectively. Aging treatment was carried out at 150°C for 100 and 300 hrs. After flip chip bonding, intermetallic compounds (IMCs) of AuSn, AuSn2, and AuSn4 were formed at interface between Au stud...
Wire bonding technology has been widely used in the semiconductor industry for interconnection between device and substrate. Gold wire has been used in industry for many years; however with the increase in the price of gold in the past few years, copper wire has become an alternative. Copper wires have better electrical and thermal performance than gold wire. However due to coppers hardness, the bonding...
Nowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-active bond pads, on a thermally enhanced BGA package with 31×31mm large body size is selected to study...
Gold wires are commonly used for wire-bonding and it fits well the industrial requirements. However, the price of Gold wires increasing significantly, Copper wires is a potential replacement for Gold due to their superior electrical and mechanical properties. In order to incorporate Cu in the wire-bonding process, substantial data regarding aging and intermetallic formation of Cu-Al bonds is required...
With SiO2 dielectric under aluminum pads, a 60 µm bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, wire pull, ball shear and number of metal lift/peeling and ball lift after wire pull) are affecting...
Gold and copper ball bonds were isothermally aged under moist conditions (85°C and 85% relative humidity (RH)) and wet conditions (85°C in DI water with and without NaCl) in an effort to better understand the corrosion mechanisms that operate under moist and wet conditions. The objective of this work is to undertake and report on the initial stages of a research project that aims to compare the performance...
For high temperature automotive application, IC products are required to pass stringent high temperature storage stress test (e.g. 5000hrs at 150 deg C), hence requires reliable wire bonds. Such requirement is especially challenging with fine pitch Au & Cu wire bond (e.g. bond pad pitch <; 70um and bonded ball diameter <; 58um), more-so on low k wafer technology with bond-over-active requirement...
For satisfying the current industrial need of downscaling electronic devices, the die-to-die or die-to-package interconnects need to decrease in size accordingly. In view of that, flip chip bumps, which are currently the smallest interconnect type, have to be further miniaturized. In this study, Cu-Sn-Cu TLP (Transient Liquid Phase) bonded bumps that consist entirely of intermetallics (IMC) are studied...
Copper and gold ball bonds were bonded on 1.2 μm thick Al-0.5%Cu-1%Si. One set of devices was aged at 175°C up to 1000 hours. A second set of devices was pre-conditioned for 168 hours at 85°C and 85% relative humidity followed by ageing at 175°C up to 1000 hours. No cratering was found with either wire in as-bonded devices but devices bonded with copper developed cratering after ageing. Neck and stitch...
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