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In this paper, tin whisker behaviour of electroplating tin coating was studied in different environments. Different thickness of electroplating tin coating on copper substrate had been tested. Two different environmental conditions had been applied :one temperature tests (70 °C)and one external force tests(70 °C /17.5N). The growth of tin whisker was studied by using scanning electron microscopy (SEM)...
In this paper, tin whisker behaviour of electroplating tin coating was studied in different environments. Different thickness of electroplating tin coating on copper substrate had been tested. Two different environmental conditions had been applied :one temperature tests (70 °C)and one external force tests(70 °C /17.5N). The growth of tin whisker was studied by using scanning electron microscopy (SEM)...
Wire bonding technology has been widely used in the semiconductor industry for interconnection between device and substrate. Gold wire has been used in industry for many years; however with the increase in the price of gold in the past few years, copper wire has become an alternative. Copper wires have better electrical and thermal performance than gold wire. However due to coppers hardness, the bonding...
Gold wires are commonly used for wire-bonding and it fits well the industrial requirements. However, the price of Gold wires increasing significantly, Copper wires is a potential replacement for Gold due to their superior electrical and mechanical properties. In order to incorporate Cu in the wire-bonding process, substantial data regarding aging and intermetallic formation of Cu-Al bonds is required...
With SiO2 dielectric under aluminum pads, a 60 µm bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, wire pull, ball shear and number of metal lift/peeling and ball lift after wire pull) are affecting...
Copper and gold ball bonds were bonded on 1.2 μm thick Al-0.5%Cu-1%Si. One set of devices was aged at 175°C up to 1000 hours. A second set of devices was pre-conditioned for 168 hours at 85°C and 85% relative humidity followed by ageing at 175°C up to 1000 hours. No cratering was found with either wire in as-bonded devices but devices bonded with copper developed cratering after ageing. Neck and stitch...
In this work, the SAC solder joints with minor Mn or RE (rare earth) additions were bonded on the substrate of OSP Cu surface finishes for evaluating the influence of minor alloying on BIT (ball impact test) behavior. The Mn-doped samples had a better resistance to the degradation in BIT performance suffering long time aging at 150??C. The greater impact force and toughness compared to the other samples...
The excessive growth of intermetallic compound (IMC) and the formation of microvoids in the interface between Sn-Ag-Cu (SAC) solder and Cu substrate have been a serious problem which may degrade the solder joints reliability. Recently, a new Cu-Zn alloy solder wetting layer for the Pb-free solders has been developed to reduce the IMC growth rate. In this paper, the kinetics of IMC growth and the shear...
The atomic structure and magnetic properties of melt-quenched Sm100-xFex (x=1, 10, 20, 30, 40) alloys were studied by means of X-ray diffraction, Mossbauer spectroscopy, and magnetic measurements. For x=10, 20, 30 or 40, clusters of amorphous Sm-Fe phases are formed in an hep Sm matrix Some of these behave superparamagnetically. The thermomagnetic curves for x=10, 20, 30 samples exhibited a field...
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