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Cu2O is a promising, earth-abundant alternative to traditional photovoltaic materials (CIGS, CdTe, etc.) because of its low cost, high availability, and straightforward processing. We report a method to fabricate Cu2O substrates with thicknesses of less than 20 microns which may be handled and processed into devices. Development of thinner Cu2O substrates is essential as extrinsic doping has been...
In this paper we show the strong influence of the composition of the Cu-Te alloy on the conductive-bridging RAM operation of Cu-Te/Al2O3/Si cells. The Cu filament generated during forming and set operations requires lower reset current for lower x in the CuxTe1-x layer. Optimum memory operation is determined for the range 0.5<;x<;0.7, which allows self-limited filament programming using 5μA...
Excellent scalability of a novel CuxSiyO emRRAM down to 22 nm node is demonstrated based on statistical data of 1 Mb test chip for the first time. The integration utilizes the standard logic process and the RRAM size is shrunk by spacer pattern technology. The reset current decreases by 5X from 130nm to 22nm node with maintaining robust data retention (10yrs. @150°C), good resistance distribution...
The research object of this paper is a certain complex sulfur-iwn which contains copper in Anhui province. It focuses on the flowsheet about the separation of copper and sulfur in low alkalinity condition. The content of copper in the original oar is 0.39%, and sulfur is 36.19 percent. In low alkalinity conditions, we used copper compound maily LP collectors, first through copper selective flotation,...
Voltage driving is a commonly used method to program the resistive switching memory. However, a question of whether voltage driving or current driving is preferred has never been answered. For periphery circuit design, one should first consider which kind of source should be adopted. In this work, we systematically evaluated the performance of Cu/HfO2/Pt memory device by using current sweeping or...
Cu-Mn-O catalysts were prepared by co-precipitation and hydrothermal method at the different calcination temperature. These catalysts were characterized by BET, XRD, SEM and the catalytic activity for the reduction of NO by propane was evaluated. XRD results showed that Cu1.5Mn1.5O4 was the main phase in all these samples. The NO conversion over the catalysts prepared by hydrothermal method was markedly...
Denitrification (De-NOx) agents using activated carbon (AC) as the support have a large specific surface area, good pore structure, low reaction temperature and low price, amongst others. In this work, CuO/AC catalysts with coconut AC supported copper were prepared. De-NOx experiments were conducted in a fixed-bed reactor using a simulated flue gas stream to investigate the effects of calcination...
We have investigated conduction in a closely packed nanocluster array of copper with a copper oxide nano shell as a function of temperature. The result is found to be nonlinear and shows a sudden increase in electrical conductivity above a critical temperature. An attempt has been made to explain this anomalous behavior in terms of electrical and physical properties of the metallic nanostructure.
A series of CuO-CeO2 catalysts doped with transition metal oxides were prepared by co-precipitation method for selective CO oxidation and the effects of the additives on the catalytic performance were examined by H2-TPR, in-situ DRIFTS techniques. The results showed that the main CO adsorption site on CuO-CeO2 series catalysts was Cu+ species. The catalytic activity at lower temperatures was related...
Heavy metals, a kind of persistent toxic substance(PTS), were taken for the study in this paper. Dust samples we recollected in Shanghai urban parks. The concentrations of mean metals in dust samples were in the order Zn >; Pb >; Cu, where Pb shows the greatest coefficient of variation. Human health risk was evaluated in Shanghai urban parks. The pathway of direct ingestion is dominating for...
The influence of Cu2O and CuO to Pd/C electrocatalytic activities on ethanol electrooxidation in KOH solution was investigated. Pd/C, Pd-Cu2O/C and Pd-CuO/C were synthesized and characterized by powder X-ray diffraction. The electrocatalytic activities were studied by Cyclic Voltammetry. The results show that catalytic activity of Pd/C for ethanol in KOH solution can be improved by Cu2O and CuO. When...
The organic thin film transistor (OTFT) with the ratio of channel width (W) to length (L) as 8000/25 was fabricated for the application of formaldehyde gas sensors. The copper phthalocyanine (CuPc) and silicon dioxide was used as the active layer and the insulating layer, respectively, and the titanium/aurum thin films were made as the source/drain electrodes for the prepared OTFT. The voltage-current...
The adoption of copper wire in high volume wire bonding production has proven successful as seen in the tremendous increase in copper wire consumption in the past year. This increase largely came from the conversion from gold to copper wire in fine pitch devices which previously had been more conservative due to concerns related to copper wire reliability. Fine pitch applications with bond pad openings...
The work presented here shows the effect of annealing temperature on CuI thin films. The 0.05 mol of CuI solution is prepared at room temperature and then deposited in silicon and glass substrate. The CuI thin films were deposited using sol-gel spin coating method. The electrical, optical properties and surface morphology was characterized by current-voltage (I-V) measurement, ultraviolet-visible...
This work studies the electrical and testing reliability issues of CuxO based RRAM (Resistive Random Access Memory). Firstly, we study the most important electrical reliability issue-data retention capability, and propose a filament/charge trap combined model to clarify the retention failure mechanism. Secondly, we respectively study the reliability problems caused by the SET compliance current in...
We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming...
The CuIn1-xGaxSe2 (CIGS) films are prepared by the selenization process including the deposition of the metal precursors followed by heating the metal precursors in a Se overpressure. The impacts of Se deposition rates on the morphology, grain growth, and atomic ratios of the resulting CIGS films are investigated. The CIGS films prepared at the high Se flow rate exhibit the improved surface morphology...
Micro-Raman spectroscopic technique has been employed to study the induced stress/strain by the metal microbumps in 3D-LSI Si die/wafer after wafer thinning and bonding, and the impact of bump spacing, bump size, bonding temperature and bonding force in the stress distribution in such a microbump bonded LSIs has been investigated. It is inferred that (i) the Si present at the interface (between CuSn...
Polycrystalline films of semiconducting Cu(In1-xGax)Se2 (CIGS) quaternary alloy, one of the promising materials for photovoltaic applications, have been prepared by means of chemical spray pyrolysis (CSP). Copper, Indium and Gallium metal chlorides and Selenourea are used as constituent elements to prepare spray solution. Single phase CIGS films with chalcopyrite structure have been successfully grown...
This study focused on the effect of solder volume on the interfacial reaction between Sn3.5Ag0.75Cu solder balls and Cu pads on PCB after various reflow soldering times. The diameters of the solder balls were 200, 300, 400 and 500 μm, respectively, and the opening diameter of the Cu pads was 250 μm. The solder volume ratio for the 200, 300, 400 and 500 μm balls was approximately 1:4:8:16. The interfacial...
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