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Consumer electronic products are evolving toward smaller size and higher efficiency. 3D IC packaging has smaller form factor and lower signal delay compared with conventional packaging. Thus, it has been widely used in mobile electronic devices. Mobile electronic device is prone to being dropped during operation. Hence, the drop reliability of electronic packaging is an important issue in 3D ICs....
ITRS has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials in flip chip technology will not be able to satisfy the thermal mechanical requirement these fine pitches. Of all the known interconnect technologies, nanostructure interconnects such as nanocrystalline Cu are the most promising technology to meet the...
As a consequence of increasing functional density and miniaturization in microelectronics new low-k and ultra-low-k materials are going to be increasingly used in Back-end of line (BEoL) layers of advanced CMOS technologies. These ongoing trends together with the transition to the use of TSVs for 3D-IC-integration cause novel challenges for reliability analysis and prediction of relevant electronics...
Delamination of mating interfaces can cause serious reliability problems in different application areas. The causes of delamination are multiple. In the case of leadframe-based chip packages, a critical interface is that between the leadframe and the moulding compound. Delamination can magnify stress levels at the interface and can lead to fatigue of interconnects. The objective of this study is to...
This study assesses the reliability life of 3D chip stacking packaging developed by the Industrial Technology Research Institute (ITRI). The simulation results show that the trends of stress of through silicon via (TSV) structures with different chip stacking numbers are nearly constant during thermal stress analysis. Therefore, the simplified two-layer chip stacking model is adopted to analyze the...
Secondary Ion Mass Spectrometry (SIMS) offers a technique of surface specific analysis with an information depth as low as 1 nm. SIMS also has high sensitivity for most elements. It is a viable analysis technique to investigate superficial residues and contamination on the surfaces of components used in IC packaging, though quantification by SIMS is difficult except for the specific case of trace...
Electromigration (EM) failure in flip-chip bumps has emerged as a major reliability concern due to potential elimination of Pb from flip-chip bumps and a continuous drive to increased IO density resulting in a reduction of bump pitch and size. Additionally, the rapid development and implementation of 3D IC structures is introducing new interconnects (u-bumps, RDL, microvias, and TSVs) at a much finer...
As the popularity of Cu wire bonding continues to grow, it inspires more packages to introduce Cu bonding to enhance product electrical, thermal & reliability performances at the same time enjoying unit package cost down. Risk of damaging the bond pad structure underneath in Cu bonding is always a challenge especially bonding on very thin bond pad structure with large wire size. 43 μm Cu wire...
The materials and fabrication techniques determine the electrical resistivity, thermal conductivity, thermal expansion coefficient, dielectric constant, loss tangent and mechanical strength of the different grades of technique. Technique such as Multi-chip module which is an assembly in more than one integrated circuit (IC) is bare mounted on a common substrate. Different materials which are used...
Wire bonding continues to be the predominant interconnect method in IC packaging. Though copper (Cu) wire bonding has been evaluated for more than a decade in replacing gold (Au) wire bonding, it is still a challenging process to adopt on several application fronts. Cost motivation is driving factor, the Cu wire bonding are replacing the Au wires in the assembly packaging production floors. Recent...
The size of IC device has been reduced resulting from the advancement of silicon fabrication technology in reducing the transistor gate length. For wire bonded devices with high IO count, the final die size is principally determined by the size and layout configuration of the IO cells and wire bond pads. Traditional design of wire bond pads would consist of a top metal layer with no active circuitry...
A detailed description of the Cu-Al wire bond interface is presented, which can possibly explain the often observed corrosion failures in humidity reliability tests. Using micro-structural analysis techniques, it is shown that the unstressed interface contains up to three intermetallic phases, where the Cu-rich phases are located at the Cu-ball interface. Upon humidity stress test only the high-Cu...
For high temperature automotive application, IC products are required to pass stringent high temperature storage stress test (e.g. 5000hrs at 150 deg C), hence requires reliable wire bonds. Such requirement is especially challenging with fine pitch Au & Cu wire bond (e.g. bond pad pitch <; 70um and bonded ball diameter <; 58um), more-so on low k wafer technology with bond-over-active requirement...
A demand for small form factor in IC packaging has lead to a reduced bump size and an increased current density. The high current density accompanying with Joule heat induces an electromigration failure. In this study, we investigated the effects of under bump metallization (UBM) on the electromigration failure. Three types of UBM such as Cu 5 μm, Cu 10 μm and Cu 5 μm/Ni 2μm were compared with 60...
This paper presents a simplified flip chip front-of-line process flow by means of eliminating de-flux and plasma processes as well as replacing the solder on pad (SOP) on solder mask defined (SMD) substrate design for a 150μm bump pitch flip chip packaging using C40 ULK (ultra low-K) wafer. Wafer sawing was performed with the combination of laser grooving and mechanical diamond blade dicing to prevent...
In this work, a new empirical method is proposed to incorporate the initial substrate warpage into package stress simulation. As a first step, the bare substrate strip warpage characteristics were mapped. The out-of-plane displacements of the substrate strips were measured as a function of temperature using shadow moire technique. It was observed that the warpage values of the bare substrate vary...
Leveraging semiconductor industry trend today, there is a massive growing demand for module package at end customers' application. This is essentially due to benefits from system in package as a complete solution for ease of use, miniaturization, enhanced thermal, EMI shielding and low cost IC packaging.
Wafer-scale three-dimensional (3D) technologies beyond post-scaling, known as Wafer-on-Wafer (WOW), have been developed for high-density integration. WOW consists of four technology modules: wafer thinning, stacking, through-silicon-via (TSV) interconnects without bump electrode pads, and packaging. All modules are carried out at the wafer scale. No degradation for advanced 35-nm SRAM logic and FRAM...
Summary form only given. This paper will describe copper wirebonding on Cu-Ni-Pd bond-pad and leadframe in QFN packages using thicker wires i.e 1.3 & 2.0mil wires. The paper introduces bonding and reliability challenges with Copper wire on Al bond pads as experienced by many Process Development Engineers. TI analog devices which mainly used BOAC dies using Cu-Ni-Pd bond-pads and copper-wire combination...
In today's lead frame IC packages, the cost of lead frames account for one of the largest portion of material costs. Etched lead frames can cost 50% of the total package cost where as stamped frames can cost around 30%. With the increasing price trend of raw copper material in recent years, fueled by increasing demand on the use of copper (e.g. as an Au bonding wire replacement) this will inevitably...
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