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Terahertz light-matter interactions within a semiconductor-filled waveguide can be tuned in space and time via photoexcited regions created on ultrafast time scales and sub-THz wavelength length scales by a patterned optical pulse. These light-induced metal-dielectric structures can be used to dynamically modify the photonic band structure of THz light within the waveguide, controlling the amplitude,...
For the near-infrared (near-IR) optical data communications, silicon photonics became a mature technology. Building on the technological developments associated with datacoms, silicon photonics now expands into the mid-infrared (mid-IR), mostly for the optical gas sensing. Here as well, the development is hampered by the absence of monolithically integrated laser sources compatible with the CMOS fab...
Integrated quantum photonic applications, providing physically guaranteed communications security, subshot-noise measurement, and tremendous computational power, are nearly within technological reach. Silicon as a technology platform has proven formidable in establishing the micro-electronics revolution, and it might do so again in the quantum technology revolution. Silicon has taken photonics by...
We demonstrated an InAsP/InP nanowire laser (diameter ∼100 nm) in telecommunication band on an Si photonic crystal platform. By measuring light-in versus light-out curves, linewidth, emission rate, and photon correlation, lasing oscillation has been unambiguously demonstrated.
We report ultra-pure single-mode photon generation through four-wave mixing in high-Q silicon microdisks. The cross correlation of photon pairs peaks over 25,000 and the self correlations of both photon modes peak around 1.8.
We demonstrate heralded single photon source on a silicon photonic chip by a pump interleaving technique. We have achieved 90±5% enhancement to single photon rate with only 14±2% reduction in quantum signal to noise ratio.
We demonstrate the first waveguide-coupled metal-cavity nanoLED in a III-V photonic membrane bonded to a silicon substrate, which operates at telecommunication wavelengths. The device works under electrical injection and was characterized through a grating coupler.
We studied the carrier multiplication efficiency in bulk silicon using optical-pump/THz-probe spectroscopy. By the close analysis of the time resolved data, we observed the enhancement of the quantum efficiency due to carrier multiplication for incident photon energy above 4.1 eV. It agrees well with the results of photo current measurements. We believe that the present results enable us to correlate...
We design a III-V nanowires based photonic cavity on top of SOI waveguide for light generation in the near infrared (~1.3μm) in a silicon photonic circuit. 3D electromagnetic simulations (FDTD) are performed to design a periodic array of III-V photonic NWs vertically grown on Si. High quality factor resonances and efficient coupling between these micro-resonators and the SOI waveguide is targeted...
We perform optical pump-THz probe measurements in four types of silicon samples to investigate carrier multiplication. We evaluate the number of carriers from the transient change of transmission after photoexcitad carriers are thermalized to the bottom of the conduction band to discuss the possibility of carrier multiplication.
For large-scale, multi-partite photonic quantum information system, stable on-demand single photon sources are particularly important building blocks. A scheme to implement the source is to multiplex many heralded single photon sources of identical photon pair generators [1]. To achieve this, we must increase the integration density of the photon pair generators. Slow light enhanced nonlinearity in...
We demonstrate an on-chip single photon source that produces ultra-bright high-purity photon pairs in a comb fashion, achieving a spectral brightness of 6.24×107 pair/s/mW2/GHz which is the highest performance reported up to date.
CMOS-compatible III–V/Si vertical-cavity surface-emitting lasers (VCSELs) based on a double set of photonic crystal reflectors are demonstrated, showing single-mode continuous-wave operation at 1.55-µm with thresholds in the sub-mW range.
We report on luminescence and optical gain in carbon nanotubes at a wavelength of 1.3 µm and on the integration of carbon nanotube properties into silicon waveguide to develop a new class of optoelectronic devices.
We report a large transient optical gain of ∼1000 cm−1 from n+ Ge-on-Si at λ=1645 nm using femtosecond pump-probe spectroscopy. The gain spectrum width is 70 nm, from 1610 to 1680 nm.
Silicon is evolving as a versatile photonic platform with multiple functionalities that can be seamlessly integrated. The tool box is rich starting from the ability to guide and amplify multiple wavelength sources at GHz bandwidths, to optomechanical MEMS. The strong confinement of light in ultra small structures also enables the generation of strong optical forces. We have recently shown that nonlinear...
We present recent progress in monolithic Ge-on-Si lasers for on-chip electronic-photonic integration, with a highlight on electrically-pumped Ge-on-Si lasers with ∼1 mW output at λ∼1530-1650 nm.
We demonstrate two-stage upconversion of single-photon signals from 1550 nm to the green spectral region with 87% internal efficiency with low excess noise, enabling sub-70-ps timing-jitter detection with Si avalanche photodiodes.
CMOS-compatible 1.55-μm emitting VCSELs employing double photonic crystal mirrors (PCMs) are presented. Single-mode polarization-controlled continuous-wave laser operation up to 43°C is demonstrated under optical pumping excitation at low thresholds.
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