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It has been shown previously that glucocorticoids exert a dual mechanism of action, meaning cytotoxic and mitogenic as well as mitogenic and anti-apoptotic, in a dose-dependent manner on CCRF-CEM cells at 72 h. Early gene expression response suggested also a dose-dependent dual mechanism of action of prednisolone which is apparently reflected on cell state upon 72 h of treatment. The present work...
We consider the digital fingerprinting problem where colluders apply uniform linear averaging followed by AWGN. For each user, the receiver computes the correlation between the attacked signal and that user's fingerprint, and performs thresholding (focused detection). We model the fingerprinting problem as a multi-user communications problem and develop a detection theoretic framework. Assuming independent...
We present a numerical investigation of the conductance and shot noise behavior of a cascade of realistic tunnel barriers, defined in a GaAs/AlGaAs heterostructure using negatively biased depletion gates. We show that, even in the presence of irregularities in the gate boundaries, strong localization dominates the transport through the device and consequently the shot noise suppression factor does...
Denial of Service is becoming a growing concern. As our systems communicate more and more with other that we know less and less, they become increasingly vulnerable to hostile intruders who may take advantage of the very protocols intended for the establishment and authentication of communication to tie up our resources and disable our servers. Since these attacks occur before parties are authenticated...
After forty years of advances in integrated circuit technology, the scaling of Silicon Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has entered the nanometer dimension with the introduction of 90 nm high volume manufacturing in 2004. Presently at 45 nm going to 32 nm node in 2009, the latest technological advancement has led to low power, high-density and high-speed generation of microprocessors...
In 0.11 um and larger technology node non-volatile memory process integration, undesired cobalt salicide residue formation is found to degrade ohmic contact resistant and cause severe yield loss. TiN/Ti/Co stack is applied in the process to get good CoSi2 formation. The abnormal salicide residue formation is detected after cobalt stripping process which is applying a two step selective wet etching...
Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit...
A non-self protection ESD scheme using grounded-gate, gate non-silicided (GG-GNS) drain/source silicide blocked (SBLK) ESD NFET offered in 45 nm SOI CMOS technology is presented based on a comprehensive study using the high current pulse characteristics. The results show that with a minimum SBLK width over drain/source, GG-GNS NFET can handle ~3.4 mA/mum current.
The ESD Associationpsilas Workgroup 5.5 subcommittee is conducting a round robin study to determine the repeatability and reproducibility of measurements made the current VF-TLP Standard Practice. This study involves seven test sites with eleven different test structures evaluated at each site. This paper summarizes these findings to date.
A method for calculating the performance of double-sided linear induction motor (DLIM) with short secondary is presented in this paper. The analytical solution of air gap flux density is firstly deduced from one-dimensional (1-D) electromagnetic field equations, then in the equivalent circuit of the motor, to take both longitudinal and transverse end effects into account, the correction coefficients...
This paper propose a control project using adaptive feedback linearization on the AC servo system. Theory derivation and computer simulation proved that the project can implement robust control of parameters and has the actual application value.
The eddy current proximity sensor or probe is composed of exciting winding, detection winding and post processing circuit. Models of the key structural and electromagnetic parameters of the sensor are analyzed. The mutual influence characteristics induced by the structural and electromagnetic parameters are provided accordingly. The pull up resistor used to improve the reliability of the sensor will...
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