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In this paper an accurate EMI model of a 5W flyback converter based on discrete devices modeling is presented. To improve the accuracy of EMI model, passive devices, active devices, power IC and the parameters of PCB are all taken into consideration. The simulation results show that, errors of main system-level parameters can be controlled in 5% and errors at the EMI peak values can be controlled...
In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.
Random Telegraph Signal (RTS) noise in submicron MOSFETs showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics, is analyzed using generation-recombination-tunneling model of current modulation in order to explain quadratic dependence of capture rate on current. Proposed model of two-step charge carrier quantum transitions involving secondary trap at the channel and...
Noise sources of 70-nm NMOS transistors were extracted to reveal the channel noise is dominant up to 26 GHz. Gate induced noise increased in proportion to f2, however, its level was 1 to 2 orders of magnitude lower than the channel noise. A new approach to accurately capturing the behavior of thermal noise by compensating for the discrepancy between extracted and simulated channel noise through the...
We present a compact modeling scheme for multiple-gate MOSFETs, based on a unified charge control model derived from the 1D Poisson's equation, which has been extended to the RF regime using the active transmission line approach. Compact expressions of the local small-signal parameters, including noise sources, are used in each segment. The resulting macro-models have been used to study the RF and...
We present a new model for single-gate (SG) SOI, cylindrical undoped (lightly doped) gate-all-around (GAA) or surrounding gate (SGT) MOSFETs and double gate fully depleted silicon-on-insulator (DG SOI) for DC, RF and noise modeling. Using this model, the single-gate, GAA and DG analog and noise performances are compared
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