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In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half...
The effect of Ni on the kinetics of solid phase epitaxial re-crystallization of amorphous germanium films is investigated with Raman spectroscopy. Both Ni implantation and deposition are employed.
SiNx-doped Sb2Te3 films for nonvolatile memories were prepared by co-sputtering with Si3N4 and Sb2Te3 alloy targets. Electrical and structural properties were investigated and compared to those of conventional GST and pure Sb2Te3 film by annealing temperature-dependent resistivity measurement, x-ray diffraction (XRD). The resistivity ratio is larger than 105 during the phase transition, accompanied...
This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get fMAX above 400 GHz. The effects of the final spike annealing temperature, the emitter doping species, the base and collector doping levels and the Si capping layer thickness are presented and discussed.
We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0...
Formation of ultra-shallow p+/n junction has been performed with the combination of low-temperature solid phase epitaxy and non-melt laser annealing. The former is aimed for improving crystallinity of junction region and the latter for activating implanted B ions. After pre-amorphization implantation of Ge, B ion implantation was performed at energy of 0.2 keV with a dose of 1.2 times 1015/cm2. With...
SDE implants were carried out in a VIISta PLAD system using both p- and n-type dopant precursors. The advanced control features in the PLAD system allowed for dopant profile control by appropriately balancing the constituent components of the plasma doping process, and retrograde dopant profiles were demonstrated for the first time using a plasma doping system. The p-doped samples were flash annealed,...
SF6 was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO2:F). SnO2:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH3)4) and O2 with SF6 between 500??C and 650??C and 10-65 mol% SF6. These were compared to un-doped SnO2 and SnO2:F grown with CBrF3. SF6 required higher thermal activation than CBrF3. High electron mobility (~40...
We report the effects of UV-ozone oxidation, oxide removal etch chemistry (dilute HCl or concentrated NH4OH), semiconductor doping, and annealing on the contact resistivity (rhoc) of Ti0.1W0.9 refractory alloy to n-type InGaAs. The semiconductor surface was oxidized through exposure to UV-ozone, then subsequently etched by either dilute HCl or concentrated NH4OH before TiW contacts were deposited...
In the setup for nonmelt laser spike anneal (LSA), the wafer is mounted with the front-side facing the laser beam and backside facing the heated hotplate. When arsenic or phosphorus-implanted silicon is subjected to LSA, sheet resistance degradation, indicative of dopant deactivation, is observed when the post-LSA thermal budget provided by the heated chuck (hotplate) is increased. This additional...
Polysilicon nanofilms (less than 100 nm in thickness) have been proved in our previous experiments to offer large gauge factor (>30) and stable temperature characteristics. This promotes their applications in piezoresistive sensing devices. In order to improve the resistance matching of sensors after fabrication, it is necessary to perform resistor trimming. The electrical trimming is an effective...
Simulation and physical experiments have shown that vacancy engineering implants have the potential to provide outstanding pMOS source/drain performance for several future CMOS device generations. Using vacancy-generating implants prior to boron implantation, hole concentrations approaching 1021cm-3 can be achieved using low thermal budget annealing. In this new study we propose that the vacancy engineering...
We found that the relatively low temperature millisecond annealing at S/D activation for nFET is enhanced the co-implanted halo activation regardless of sequence of MSA and spike-RTA. Tilt-and-twist extension implantation technique with millisecond extension annealing for pFET was also performed to reduce the parasitic resistance. By combining these technique, an aggressively scaled high-performance...
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