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The work presented here shows a change in migration behaviour of a transferred AlCu metallization system. Different failure mechanisms in metallization are known. Migration effects like electro-, thermo- and stress migration are the main failure mechanisms in a metallization. This study shows the detection and exploration of a significant change in the migration mechanism of a wide lines of a top...
The reliability of high electron mobility transistors (HEMTs) significantly depends on the stability of the gate Schottky contact to the semiconductor. Gate sinking during the fabrication and device operation alters transconductance, gate capacitance, and threshold voltage, which are crucial device parameters for modeling HEMT devices and designing circuits. In particular for enhancement-mode InAlAs/InGaAs/InP...
In flip-chip solder joints, Cu has been used as a under-bump metallization (UBM) for its excellent wettability with solders. In addition, electromigration has become a crucial reliability concerns for fine-pitch flip chip solder joints. In this paper, 3D finite element method was employed to simulate the current density distribution for the eutectic SnPb solder joints with 5 mum, 10 mum, and 20 mum...
Solder paste is commonly applied in electronics assemblies in order to form electrical and mechanical joints between circuit metallization pads and surface mount components. Thus, the solder joint integrity is a critical aspect to be considered because it impacts strength and reliability of the bond. A major type of defects encountered in solder joints are pores. Porosity in solder joints may affect...
An analytical model for linewidth-dependent electromigration lifetime is proposed. Agreement between the model prediction and experimental data is excellent. The application of this model to design rule definition versus linewidth is discussed. As the linewidth of VLSI metallization interconnects continues to scale down, the reliability performance becomes an increasingly important issue. It has been...
A Al/Al stacked multilayered interconnection that can suppress both stress-induced and electromigration failures without barrier metal was developed. Stress-induced failures are almost completely suppressed and electromigration lifetime is improved more than four times. The higher reliability mechanism is explained in terms of graphed results of the microstructure and mechanical properties
Electromigration phenomena associated with vias of multilayered TiW/AlCuSi/TiW metallization were studied. It was found that the resistance change due to stress current of the via chain was different from that of the metal line. The activation energy related to the mean time to failure (MTTF) of the via chain was much larger than that of the metal line. The alloying reaction between Al and TiW dominated...
The electromigration performance of the 1.2-μm-diameter via chain between two levels of an Al line was evaluated. It was found that the electromigration lifetime of the vias decreases owing to the increase in the total compressive stress in the passivation layer, even though the step coverage of Al film in the vias is improved by controlling the slope angle of the via hole to increase the electromigration...
It is argued that the substantial reduction in hillock formation with F (fluorine) incorporation (relative to Cu incorporation) is predominantly due to the reactive nature of the F. The highly electronegative fluorine forms a much stronger chemical bond than aluminum with itself or aluminum with Cu, which acquires its beneficial effects from forming Cu precipitates at grain boundaries. Due to the...
Selectively deposited tungsten can greatly improve metal step coverage in the contacts. At the same time, the etch-stop properties of tungsten allow one to tighten up a number of design rules leading to a reduction in die size. Blanket tungsten (with an etchback or as an interconnect by itself) has many of the same advantages. Device reliability is also greatly improved due to the refractory nature...
Reliable Al metallization has been performed using a plasma CVD (chemical vapor deposition) technique. In-situ doping of carbon onto an Al film suppresses the growth of Al crystal grains, hillocks and spikes. MTFs (median times to failure) of the films due to electromigration are one order of magnitude greater than that of a pure Al film. The resistivity is reduced by a factor of 3 to 4 when carbon-doped...
A novel sputter-deposited Al-Si-Pd alloy has been investigated for use for VLSI interconnection in place of Al-Si-Cu-alloy. Workability of the Al-Si-Pd alloy in submicron patterning has proved to be much better than that of Al-Si-Cu alloy, and both electromigration resistance and stress-induced migration resistance are higher than those of Al-Si-Cu alloy. Long-term reliability tests of a resin-molded...
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